世界各国のリアルタイムなデータ・インテリジェンスで皆様をお手伝い

Power Electronics for Electric Vehicles 2025-2035: Technologies, Markets, and Forecasts


電気自動車用パワーエレクトロニクス 2025-2035:技術、市場、予測

この調査レポートでは、電気自動車向けパワーエレクトロニクス市場を分析し、インバータ、車載充電器、DC-DCコンバータにおけるSiC MOSFETの採用について、200mmウェハ(8インチ)から自動車OEMの動向まで考察... もっと見る

 

 

出版社 出版年月 電子版価格 ページ数 言語
IDTechEx
アイディーテックエックス
2024年6月3日 US$7,000
電子ファイル(1-5ユーザライセンス)
ライセンス・価格情報
注文方法はこちら
286 英語

※ 調査会社の事情により、予告なしに価格が変更になる場合がございます。
最新の価格はデータリソースまでご確認ください。


 

Summary

この調査レポートでは、電気自動車向けパワーエレクトロニクス市場を分析し、インバータ、車載充電器、DC-DCコンバータにおけるSiC MOSFETの採用について、200mmウェハ(8インチ)から自動車OEMの動向まで考察しています。
 
主な掲載内容(目次より抜粋)
  • 電気自動車市場: 地域動向と今後の成長
  • EVパワーエレクトロニクスとWBG半導体の概要
  • シック基板製造チェーン
  • パワーエレクトロニクスに影響を与えるトレンド
  • パワー半導体材料、デバイス、OEMのサプライチェーン
  • パワーエレクトロニクスパッケージ EVユースケース
  • EV用パワーエレクトロニクスの熱管理
  • 予測
  • 企業プロファイル
 
Report Summary
This report provides an analysis of the power electronics market for electric vehicles, with insights regarding the adoption of SiC MOSFETs in the inverter, onboard charger, and DC-DC converter, from 200mm wafers (8 inch), to trends in automotive OEMs. GaN adoption in the automotive sector is also looked at, and potential technologies are analyzed. IDTechEx forecasts the power electronics market by voltage (600V, 1200V) and technology (Si, SiC, GaN).
 
The demand for electric vehicles (EVs) will grow rapidly over the next decade, and the EV power electronics market will grow even faster. To tackle consumer concerns about battery electric vehicles (BEVs) compared to internal combustion engines, automotive OEMs are looking for ways to increase range and speed up charging. Aside from battery and motor technologies, wide bandgap (WBG) semiconductors, silicon carbide (SiC) and gallium nitride (GaN), have the potential to revolutionize EV powertrains in displacing the incumbent silicon (Si) IGBTs and MOSFETs with 800V architectures and significant efficiency gains.
 
IDTechEx's report Power Electronics for Electric Vehicles 2025-2035 analyzes the growth potential and future trends in WBG technologies, from the rapid scaling of SiC MOSFETs to the potential of GaN to consolidate itself in the EV power electronics market. The report includes granular forecasts detailing unit sales, power (GW), and market size (US$) demand segmented by inverters, onboard chargers (OBC), and DC-DC converters by voltage (600V, 1200V) and semiconductor technology (Si, SiC, GaN).
 
IDTechEx forecasts the EV power electronics market to grow with a double-digit CAGR from 2023-2035. Source: Power Electronics for Electric Vehicles 2025-2035
 
SiC supply chain
SiC has an established supply chain from raw material to wafer, to processing technologies to device packaging. This, however, doesn't mean that there isn't room for developments in the SiC supply chain. SiC wafer supply is an area dominated by US companies, and OEMs are looking to multisource their SiC to guarantee supply and cost. The transition from 150mm to 200mm SiC wafers will significantly increase production capacity, which is vital for the automotive industry. Furthermore, there is a push to globalize the SiC supply chain, with companies in Europe and Asia scaling up wafer operations.
 
SiC MOSFETs will continue to be more expensive than Si IGBTs, despite significant reductions in prices over the past 5 years. This is due to infrastructure requirement, the much higher price of SiC wafers, and energy-intensive processing steps. IDTechEx does a cost analysis of implementing SiC MOSFETs in EVs, examining the impact at both the device and vehicle levels. Collaboration is happening across the supply chain: OEMs are borrowing EV platforms from others, device manufacturers are investigating innovative ways to increase yields, and suppliers are acquiring other companies to vertically integrate and strengthen their supply chain control. OEMs are collaborating with automotive semiconductor suppliers to get the most out of their powertrains.
 
SiC MOSFET adoption in the EV market
Si IGBTs have been the singular option for the traction inverter for 20 years, accompanied by Si MOSFETs and diodes for the onboard charger and DC-DC converter. They have proven to be reliable at the medium-high power levels for the inverter, yet current generation EVs are transitioning to SiC MOSFETs, and ramping in market share will continue to grow, with IDTechEx predicting that SiC MOSFETs will be the majority of the EV inverter market by 2035 Compared with Si IGBT, SiC MOSFETs offer several desirable features, including high temperature operation, better thermal conductivity, faster switching speeds potentially increasing EV ranges by 7%, and smaller die and general form factor for weight and volume savings. Development in SiC MOSFET technology, from packaging to trench technologies has improved massively over the past 10 years, to tackle concerns over supply chain, thermal management, and reliability. More information on the SiC MOSFETs and supply chain analysis, please refer to Power Electronics for Electric Vehicles 2025-2035.
 
SiC MOSFETs will continue to eat up market share, with 1200V MOSFETs enabling 800V architectures. Source: Power Electronics for Electric Vehicles 2025-2035
 
OBCs and DC-DC converters operate at powers an order of magnitude lower than inverters, yet the advantages of SiC MOSFET persist: higher power density, a reduction in losses, and a slight increase in range. Moreover, SiC in the OBC allows for faster charging, and in the DC-DC converter, transfers power more efficiently to the low voltage battery, making the auxiliary power-hungry devices in an EV (infotainment, heat pumps, headlights) less wasteful. This drives SiC MOSFET adoption in the OBC and DC-DC converters, and the lower power requirements mean that IDTechEx predicts GaN to enter this market earlier than for inverters.
 
GaN Technologies for Automotive
GaN HEMTs and FETs have a role in the automotive semiconductor market. The extent of this role depends on certain developments needed to maximize the potential of a material that can convert power more efficiently than SiC. Currently, most GaN devices on the market are limited to 650V and are lateral in construction. To maximize the potential of automotive GaN, steps need to be taken to make it feasible at higher voltages, especially as 800V architectures gain market share in the mainstream EV sector. Whether through improvements in engineering technology or at the device level, IDTechEx analyzes ways that GaN can realize its potential in the automotive industry. Alternatives to GaN-on-Si devices are investigated, and companies analyzed. IDTechEx's latest research Power Electronics for Electric Vehicles 2025-2035 includes a 10-year forecast of GaN in power electronics for EVs, expecting significant headway for OBCs and DC-DC converters, with inverters to come later.
 
Power Electronics Innovations
While ongoing improvements at the device level continue, OEMs and tier-one suppliers also focus on enhancing EV performance. Key considerations include reducing size of the wiring and costs of the passive components, as well as understanding the most effective cooling methods. The integration of power electronics with the powertrain represents a key growth area for EVs, aiming to maximize performance while minimizing cost. IDTechEx examines available market solutions and active components in this space. The degree of integration varies widely, ranging from mechanical integration to electronic integration, with the potential to consolidate all power electronics into a single unit.
 
This report provides the following key information:
  • Insights into advances in electric vehicle (EV) power electronics: the inverter, onboard charger (OBC) and DC-DC converter
  • Adoption of wide bandgap (WBG) semiconductors GaN and SiC
  • Supply chain for SiC MOSFETs and Si IGBTs
  • Analysis of 800V architectures and integration of power electronics
  • Granular 10 year forecasts in US$ and GW


ページTOPに戻る


Table of Contents

 

ページTOPに戻る

ご注文は、お電話またはWEBから承ります。お見積もりの作成もお気軽にご相談ください。

webからのご注文・お問合せはこちらのフォームから承ります

本レポートと同じKEY WORD()の最新刊レポート

  • 本レポートと同じKEY WORDの最新刊レポートはありません。

よくあるご質問


IDTechEx社はどのような調査会社ですか?


IDTechExはセンサ技術や3D印刷、電気自動車などの先端技術・材料市場を対象に広範かつ詳細な調査を行っています。データリソースはIDTechExの調査レポートおよび委託調査(個別調査)を取り扱う日... もっと見る


調査レポートの納品までの日数はどの程度ですか?


在庫のあるものは速納となりますが、平均的には 3-4日と見て下さい。
但し、一部の調査レポートでは、発注を受けた段階で内容更新をして納品をする場合もあります。
発注をする前のお問合せをお願いします。


注文の手続きはどのようになっていますか?


1)お客様からの御問い合わせをいただきます。
2)見積書やサンプルの提示をいたします。
3)お客様指定、もしくは弊社の発注書をメール添付にて発送してください。
4)データリソース社からレポート発行元の調査会社へ納品手配します。
5) 調査会社からお客様へ納品されます。最近は、pdfにてのメール納品が大半です。


お支払方法の方法はどのようになっていますか?


納品と同時にデータリソース社よりお客様へ請求書(必要に応じて納品書も)を発送いたします。
お客様よりデータリソース社へ(通常は円払い)の御振り込みをお願いします。
請求書は、納品日の日付で発行しますので、翌月最終営業日までの当社指定口座への振込みをお願いします。振込み手数料は御社負担にてお願いします。
お客様の御支払い条件が60日以上の場合は御相談ください。
尚、初めてのお取引先や個人の場合、前払いをお願いすることもあります。ご了承のほど、お願いします。


データリソース社はどのような会社ですか?


当社は、世界各国の主要調査会社・レポート出版社と提携し、世界各国の市場調査レポートや技術動向レポートなどを日本国内の企業・公官庁及び教育研究機関に提供しております。
世界各国の「市場・技術・法規制などの」実情を調査・収集される時には、データリソース社にご相談ください。
お客様の御要望にあったデータや情報を抽出する為のレポート紹介や調査のアドバイスも致します。



1. EXECUTIVE SUMMARY
1.1. Report Introduction
1.2. Power Electronics in Electric Vehicles
1.3. Benchmarking Silicon, Silicon Carbide & Gallium Nitride Semiconductors
1.4. Automotive GaN Device Suppliers are Growing
1.5. GaN vs SiC potential in the Inverter
1.6. Inverter Power Density Increases Over Time
1.7. 200mm SiC Wafer Production Worldwide
1.8. Vertical Integration: Acquisitions and Collaborations
1.9. SiC Impact on the Inverter Cost
1.10. Si IGBT and SiC MOSFET Price Comparison
1.11. SiC MOSFET by Automotive OEMs and Suppliers - Leading OEMs (1)
1.12. Si IGBT Suppliers to Leading OEMs (1)
1.13. SiC Drives 800V Platforms
1.14. 800V charging speeds
1.15. 800V Platforms SiC and Si IGBT Inverters
1.16. Integration of Power Electronics
1.17. Integrated OBC with DC-DC converter
1.18. Traction Integrated Onboard Charger
1.19. Comparison of Single-Sided Cooling and Double-Sided Cooling
1.20. Market Share of Single and Double-Sided Cooling: 2024-2034
1.21. Inverter Market Share 2022-2035: GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V
1.22. OBC Forecast: Si, SiC, GaN 2022-2035 (GW)
1.23. DC-DC Converter Forecast: Si, SiC, GaN 2022-2035 (GW)
1.24. Inverter, OBC, DC-DC Converter Forecast 2022-2035 (GW)
1.25. Inverter, OBC, DCDC Converter Forecast 2022-2035 (US$ billion)
2. ELECTRIC VEHICLE MARKETS: REGIONAL TRENDS AND FUTURE GROWTH
2.1. Electric Vehicle Definitions
2.2. Electric Vehicles: Typical Specs
2.3. Exponential Growth in Regional EV Markets
2.4. Regional Trends: China
2.5. Regional Trends: EU + UK + EFTA
2.6. EU Emissions and Targets
2.7. Regional Trends: US
2.8. Hybrid Car Sales Peak
2.9. Powertrain Tailpipe Emissions Comparison
2.10. Cars - Total Cost of Ownership
2.11. Chip Shortages - 2020 to 2023
2.12. Chip Shortages - Automaker Reactions
2.13. Chip Shortages - Electric Vehicles
3. OVERVIEW OF EV POWER ELECTRONICS AND WBG SEMICONDUCTORS
3.1. Introduction and Benchmarking Si, SiC and GaN
3.1.1. What is Power Electronics?
3.1.2. Power Electronics Use in Electric Vehicles
3.1.3. Transistor History & MOSFET Overview
3.1.4. Wide Bandgap (WBG) Semiconductor Advantages & Disadvantages
3.1.5. Benchmarking Silicon, Silicon Carbide & Gallium Nitride Semiconductors
3.1.6. Advantages of SiC Material
3.1.7. Si IGBT and SiC MOSFET Price Comparison
3.1.8. SiC and GaN Device Cost Comparison
3.1.9. Limitations of SiC Power Devices
3.1.10. GaN's Potential to Reach High Voltage
3.1.11. Qromis Engineered Substrate for GaN Power: QST
3.1.12. SiC & GaN have Substantial Room for Improvement
3.1.13. GaN to Become Preferred OBC Technology
3.1.14. How GaN is implemented into an OBC
3.1.15. GaN Systems' Onboard Charger
3.1.16. Challenges for GaN Devices
3.1.17. SiC Power Roadmap
3.1.18. Applications Summary for WBG Devices
3.2. GaN Companies
3.2.1. Automotive GaN Device Suppliers are Growing
3.2.2. Enhancement Mode vs Depletion Mode
3.2.3. GaN Systems
3.2.4. Texas Instruments and STMicroelectronics
3.2.5. Transphorm
3.2.6. VisIC Technologies
3.2.7. Efficient Power Conversion
3.2.8. Nexperia
3.2.9. GaN vs SiC potential in the Inverter
3.2.10. Ricardo: GaN in the Automotive Market
3.2.11. Innoscience
3.2.12. Power Integrations
3.2.13. Other GaN Companies: Qromis, QPT, BelGaN, Cambridge GaN Devices, Odyssey Semiconductor
3.3. Inverter, OBC, Converter Design & Si, SiC, GaN Outlook
3.3.1. Inverter Overview
3.3.2. Pulse Width Modulation
3.3.3. Traditional EV Inverter
3.3.4. Discretes & Modules
3.3.5. Inverter Printed Circuit Boards
3.3.6. Inverter Components and Cost
3.3.7. Electric Vehicle Inverter Benchmarking
3.3.8. Electric Vehicle Inverter Benchmarking 2
3.3.9. SiC Impact on the Inverter Package
3.3.10. Inverter Forecast 2022-2035 (GW): GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V
3.3.11. OBC Forecast: Si, SiC, GaN 2022-2035 (GW)
3.3.12. DC-DC Converter Forecast: Si, SiC, GaN 2022-2035 (GW)
3.3.13. Onboard Charger Circuit Components
3.3.14. Tesla Onboard Charger / DC-DC Converter
3.3.15. OBC by Level: 4kW, 6-11.5kW, 16-22kW 2023-2035
4. SIC SUBSTRATE MANUFACTURING CHAIN
4.1. Introduction
4.2. Si IGBT Production: Raw Material to EV
4.3. SiC MOSFET Production: Raw Material to EV
4.4. SiC-Specific Equipment
4.5. From 150mm to 200mm: Potential Cost Advantages
4.6. 200mm Wafer Die Count Advantage
4.7. 200mm SiC Wafer Production Worldwide
4.8. Vertical Integration: Acquisitions and Collaborations
4.9. Denso: Research and Development for Faster SiC Crystal Growth
4.10. Siltectra: Cold Split Technology
4.11. SmartSiC Technology from SOITEC
4.12. Summary of SmartSiC Advantages
4.13. Sumitomo Metal Mining: SiCkrest
4.14. Sumitomo Metal Mining: SiCkrest (2)
5. TRENDS IMPACTING POWER ELECTRONICS
5.1. Introduction
5.1.1. Improving the efficiency of power electronics
5.1.2. Efficiency and thermal gains, 800V
5.1.3. Examples of SiC in the automotive industry
5.2. SiC and 800V
5.2.1. SiC Drives 800V Platforms
5.2.2. 800V charging speeds
5.2.3. GMC Hummer: 800V charging without 800V architecture
詳細検索

このレポートへのお問合せ

03-3582-2531

電話お問合せもお気軽に

 

2024/12/20 10:28

158.95 円

165.20 円

201.28 円

ページTOPに戻る